model: IRFU5410PBF
Risk Level: 5.18
Is Samacsys? N
Other features: HIGH
RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy
Efficiency Class (Eas): 194 mJ
Shell connection: DRAIN
Configuration: SINGLE
WITH BUILT-IN DIODE
Minimum drain-source
breakdown voltage: 100 V
Maximum Drain Current
(Abs) (ID): 13 A
Maximum drain current
(ID): 13 A
Maximum drain-source
on-resistance: 0.205 ?
FET Technology: METAL-OXIDE
SEMICONDUCTOR
Moisture Sensitivity
Level: 1
Number of components: 1
Number of terminals: 3
Working Mode: ENHANCEMENT
MODE
Maximum Operating
Temperature: 150 °C
Peak Reflow
Temperature (Celsius): 260
Polarity/Channel
Type: P-CHANNEL
Maximum power
dissipation (Abs): 66 In
Maximum pulse drain
current (IDM): 52 A
Subcategories: Other
Transistors
Surface Mount: NO
Terminal surface: Matte Tin
(Sn) - with Nickel (Ni) barrier
Terminal type: THROUGH-HOLE
Terminal Location: SINGLE
Maximum time at peak
reflow temperature: 30
Transistor
Applications: SWITCHING
Transistor component
materials: SILICON
