- model: 2SK897
- life cycle: Active
- Risk Level: 5.82
- Configuration: Single
- Maximum Drain Current
(Abs) (ID): 4 A & 550V
- FET Technology: METAL-OXIDE
SEMICONDUCTOR
- Operating mode: ENHANCEMENT MODE
- Maximum Operating
Temperature: 150 °C
- Polarity/Channel
Type: N-CHANNEL
- Maximum power
dissipation (Abs): 40 W
- Subcategory: FET General
Purpose Power
- Surface Mount: NO
- Terminal surface: Tin/Lead (Sn/Pb)
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