- model: 2SK2865
- package instruction: IN-LINE,
R-PSIP-T3
- Contacts: 3
- Reach Compliance Code? unknown
- Risk Level: 5.67
- Avalanche Energy
Efficiency Class (Eas): 93 mJ
- Shell connection: DRAIN
- Configuration: SINGLE
WITH BUILT-IN DIODE
- Minimum drain-source
breakdown voltage: 600 V
- Maximum drain current
(ID): 2 A
- Maximum drain-source
on-resistance: 5 Oh
- FET Technology: METAL-OXIDE
SEMICONDUCTOR
- Number of components: 1
- Number of terminals: 3
- Operating mode: ENHANCEMENT
MODE
- Polarity/Channel
Type: N-CHANNEL
- Maximum pulse drain
current (IDM): 8 A
- Surface Mount: NO
- Terminal surface: Tin/Lead
(Sn/Pb)
- Terminal type: THROUGH-HOLE
- Terminal Location: SINGLE
- Transistor
Applications: SWITCHING
- Transistor component
materials: SILICON
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