P-Channel: It is a P-channel TrenchFET Power MOSFET.Drain-to-Source Voltage (Vdss): Rated for a maximum of -60V.Continuous Drain Current (Id): Can handle a continuous drain current of 4.7A at 25°C.Low On-Resistance (RDS(on)): Features a low on-resistance of 0.1 Ohm @ 4.7A, -10V.Logic Level Gate: The Gate Source Threshold Voltage Max is 3V.Power Dissipation: 5W.Operating Temperature Range: -55°C to +150°C.Standard Package: Available in the SOIC surface-mount power package.High Reliability: Designed for high reliability, suitable for various applications.Environmentally Friendly: The SI9407BDY-T1-GE3 is a lead-free and RoHS compliant device.
