RJH60D2 TO220F Trans IGBT Chip N-CH 600V 25A 34000mW 3-Pin(3+Tab)

High Speed Switching: It incorporates trench gate and thin wafer technology for high-speed switching performance.Built-in Diode: Includes a fast recovery diode with a typical reverse recovery time of 100 ns.Low Saturation Voltage: Offers a low collector-to-emitter saturation voltage (VCE(sat)) of typically 1.7V at an IC of 12A and VGE of 15V.Short Circuit Withstand Time: Provides a short circuit withstand time of typically 5µs.TO-220FL Package: Packaged in a TO-220FL, which is a 3-pin (3 + Tab) package designed for through-hole mounting.Operating Temperature: Can operate with a junction temperature up to 150°C

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