RFD14N05LSM SMD- MOSFET N-CH 50V 14A TO252AA RFD14N05LSM MOSFET, N, LOGIC, D-PAK OSFET D14N05L DIP HARRIS

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model:                                                         RFD14N05LSM

Is it lead-free?                                               Lead Free

Contacts:                                                      3

Risk Level:                                                     3.01

Shell connection:                                           DRAIN

Configuration:                                               SINGLE WITH BUILT-IN DIODE

Minimum drain-source breakdown voltage:    50 V

Maximum Drain Current (Abs) (ID):                 14 A

Maximum drain current (ID):                           14 A

Maximum drain-source on-resistance:            0.1 ?

FET Technology:                                            METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level:                              1

Number of components:                                1

Number of terminals:                                     2

Operating mode:                                          ENHANCEMENT MODE

Maximum Operating Temperature:                 175 °C

Polarity/Channel Type:                                   N-CHANNEL

Maximum power dissipation (Abs):                 48 W

Surface Mount:                                             YES

Terminal surface:                                           Matte Tin (Sn)

Terminal type:                                               GULL WING

Terminal Location:                                         SINGLE

Transistor Applications:                                 SWITCHING

Transistor component materials: SILICON

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