MJD45H11RIG TO-252 45H11 Trans GP BJT PNP 80V 8A P-CHANNAL,J45H11G TO-252,

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MJD45H11-1G BJT Datasheet Type of Transistor:BJT Type Designator:MJD45H11-1G Material of Transistor:Si Polarity:PNP Maximum Collector Power Dissipation:20 W SMD Transistor Code:J45H11G Maximum Collector-Base Voltage:80 V Maximum Collector-Emitter Voltage:80 V Maximum Emitter-Base Voltage:5 V Maximum Collector Current:8 A Maximum Operating Junction Temperature:150 °C Transition Frequency:90 MHz Forward Current Transfer Ratio (hFE Value):40 Collector Capacitance:130 pF Package:TO-252

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model:                                 MJD45H11RLG

Is it lead-free?                      Lead Free

life cycle:                              Active

Contacts:                             3

Risk Level:                            0.46

Shell connection:                  COLLECTOR

Maximum collector current (IC): 8 A

Collector-emitter maximum voltage:     80 V

Configuration:                      SINGLE

Minimum DC current gain (hFE):           40

Moisture Sensitivity Level:      1

Number of components:       1

Number of terminals:            2

Maximum Operating Temperature:       150 °C

Peak Reflow Temperature (Celsius):      260

Polarity/Channel Type:          PNP

Maximum power dissipation (Abs):       20 W

Surface Mount:                     YES

Terminal surface:                  Tin (Sn)

Terminal type:                      GULL WING

Terminal Location:                SINGLE

Maximum time at peak reflow temperature:      40

Transistor Applications:         SWITCHING

Transistor component materials:          SILICON

Nominal transition frequency (fT):            90 MHz

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