IRFU5410PBF TO-252 MOSFET P-CHANNEL 100V 13A

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model:                                                   IRFU5410PBF

Risk Level:                                               5.18

Is Samacsys?                                         N

Other features:                                       HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Avalanche Energy Efficiency Class (Eas):     194 mJ

Shell connection:                                     DRAIN

Configuration:                                         SINGLE WITH BUILT-IN DIODE

Minimum drain-source breakdown voltage:      100 V

Maximum Drain Current (Abs) (ID):           13 A

Maximum drain current (ID):                     13 A

Maximum drain-source on-resistance:      0.205 ?

FET Technology:                                      METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level:                        1

Number of components:                          1

Number of terminals:                               3

Working Mode:                                       ENHANCEMENT MODE

Maximum Operating Temperature:           150 °C

Peak Reflow Temperature (Celsius):          260

Polarity/Channel Type:                             P-CHANNEL

Maximum power dissipation (Abs):           66 In

Maximum pulse drain current (IDM):         52 A

Subcategories:                                        Other Transistors

Surface Mount:                                       NO

Terminal surface:                                     Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal type:                                         THROUGH-HOLE

Terminal Location:                                   SINGLE

Maximum time at peak reflow temperature:      30

Transistor Applications:                           SWITCHING

Transistor component materials:              SILICON

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