IRFU4510 TO-251 MOSFET N-CH 100V 63A,

• Drain-to-Source Voltage (V_DS): 100 V
• Continuous Drain Current (I_D): 56 A (package limited)
• Pulsed Drain Current (I_DM): 252 A
• Gate-to-Source Voltage (V_GS): ±20 V
• Maximum Power Dissipation (P_D): 143 W (at T_C = 25°C)
• Junction Temperature Range (T_J): -55°C to +175°C
• R_DS(on) (Max): 13.9 m? at V_GS = 10 V
• Total Gate Charge (Q_g): 81 nC at V_GS = 10 V
• Input Capacitance (C_iss): 3031 pF at V_DS = 50 V
• Package: IPAK (TO-251AA)

Features:

• Low R_DS(on): Ensures minimal conduction losses, enhancing efficiency.
• High Current Capability: Supports continuous drain currents up to 56 A, suitable for high-power applications.
• Fast Switching: Optimized for applications switching below 100 kHz, making it ideal for low-frequency operations.
  

Applications:

• High-efficiency synchronous rectification in SMPS
• Uninterruptible power supplies (UPS)
• High-speed power switching