IRFP450 TO-247-3 Trans MOSFET N-CH 500V 14A

• Type: N-Channel MOSFET
• Maximum Drain-Source Voltage (V_DSS): 500V
• Continuous Drain Current (I_D): 14A (at 25°C)
• Pulsed Drain Current (I_DM): 54A
• Gate-Source Voltage (V_GS): ±20V
• Threshold Voltage (V_GS(th)): 2.0V - 4.0V
• Drain-Source On-Resistance (R_DS(on)): 0.4? (max)

Power Dissipation & Thermal Characteristics

• Maximum Power Dissipation (P_D): 190W (at 25°C)
• Thermal Resistance Junction-to-Case (R_?JC): 0.8°C/W

Switching Characteristics

• Total Gate Charge (Q_G): 79nC (typical)
• Rise Time (t_r): 29ns
• Fall Time (t_f): 24ns