- Type: N-channel MOSFET
- Package: TO-220
- Drain-Source Voltage (V_DS): 100V
- Continuous Drain Current (I_D): 33A (at 25°C)
- Gate Threshold Voltage (V_GS(th)): 2.0V to 4.0V
- Gate-Source Voltage (V_GS): ±20V (maximum)
- R_DS(on) (On-Resistance): Typically 0.077? at V_GS = 10V
- Total Gate Charge (Q_g): 71nC (typical)
- Maximum Power Dissipation (P_D): 150W (at 25°C)
- Thermal Resistance Junction to Case (R_thJC): 1.0°C/W
- Thermal Resistance Junction to Ambient (R_thJA): 62.5°C/W
- Maximum Drain-Source Voltage (V_DS): 100V
- Operating Junction Temperature: -55°C to +150°C
- Input Capacitance (C_iss): 1,250pF
- Output Capacitance (C_oss): 170pF
- Reverse Transfer Capacitance (C_rss): 40pF
Key Features:
- Low On-Resistance: It provides low power losses.
- High-Speed Switching: Suitable for high-speed switching applications.
- Low Gate Charge: Ensures efficient drive circuits.
- High Current Capability: Can handle up to 33A continuously at 25°C.
- Thermally Robust: High power dissipation and wide junction temperature range make it reliable in demanding conditions.
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