model: FQPF11N40
Number of needles: 3
Risk Level: 5.88
Other features: FAST
SWITCHING
Avalanche Energy
Efficiency Class (Eas): 520 mJ
Shell connection: ISOLATED
Configuration: SINGLE
WITH BUILT-IN DIODE
Minimum drain-source
breakdown voltage: 400 V
Maximum Drain Current
(Abs) (ID): 6.6 A
Maximum drain current
(ID): 6.6 A
Maximum drain-source
on-resistance: 0.48 ?
FET Technology: METAL-OXIDE
SEMICONDUCTOR
Number of components: 1
Number of terminals: 3
Working Mode: ENHANCEMENT
MODE
Maximum Operating
Temperature: 150 °C
Polarity/Channel
Type: N-CHANNEL
Maximum power
dissipation (Abs): 50 W
Maximum pulse drain
current (IDM): 26 A
Subcategories: FET
General Purpose Power
Surface Mount: NO
Terminal surface: Tin/Lead
(Sn/Pb)
Terminal type: THROUGH-HOLE
Terminal Location: SINGLE
Transistor
Applications: SWITCHING
Transistor component
materials: SILICON
