CS12N65F FQPF12N65C TO-220F MOSFET N-CH 600V 12A

The CS12N65F is an N-channel enhancement-mode power MOSFET designed for high-voltage applications.

Key Specifications:

• Drain-Source Voltage (V_DS): 650V
• Continuous Drain Current (I_D): 12A at T_C = 25°C
• Gate-Source Voltage (V_GS): ±30V
• Drain-Source On-Resistance (R_DS(on)): 0.66? (typical)
• Total Gate Charge (Q_g): 49nC
• Rise Time (t_r): 32ns
• Maximum Power Dissipation (P_D): 65W
• Operating Junction Temperature (T_J): -55°C to +150°C

These characteristics make the CS12N65F suitable for applications such as switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), and power factor correction (PFC) circuits.