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BS170 3PIN NPNTRANSISTOR,BS170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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₹ 15.00
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  • 1
These N-Channel enhancement mode field effecttransistors are produced using Fairchild's proprietary, highcell density, DMOS technology. These products have beendesigned to minimize on-state resistance while providerugged, reliable, and fast switching performance. They canbe used in most applications requiring up to 500mA DC.These products are particularly suited for low voltage, lowcurrent applications such as small servo motor control,power MOSFET gate drivers, and other switchingapplications.

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Category: SEMICONDUCTORS-IC-FET-SMD-TRANSISTOR

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BS170 3PIN NPNTRANSISTOR,BS170 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SEMICONDUCTORS-IC-FET-SMD-TRANSISTOR

model: 

BS170 

Risk level: 

5.66 

Is Samacsys? 

N 

Configuration: 

Single 

Maximum drain current (Abs) (ID): 

0.5 A 

FET technology: 

METAL-OXIDE SEMICONDUCTOR 

Operating mode: 

ENHANCEMENT MODE 

Maximum operating temperature: 

150 °C 

Polarity/Channel Type: 

N-CHANNEL 

Maximum power dissipation (Abs): 

0.83 W 

Subcategory: 

FET General Purpose Power 

Surface mount: 

NO 

Terminal surface layer: 

Tin/Lead (Sn/Pb) 

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