Type Designator: BCY70
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 50Type Designator: BCY70
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 50
