2SK612 TO251 N-Channel MOS Field Effect Power Transistors 2A 100V TO251 PRINTING MECH

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Item Code: 5500-TO-251

₹ 125.00

Status:
In Stock
Minimum Quantity:
1

mos n-ch 2A 100V TO251-3,

Variants:

Black New TO-251-3

Category: SEMICONDUCTORS-IC-FET-SMD-TRANSISTOR

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model: 2SK612-Z
life cycle: Obsolete
package instruction: SMALL OUTLINE, R-PSSO-G2
Risk Level: 5.84
Other features: LOGIC LEVEL COMPATIBLE
Shell connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage: 100 V
Maximum drain current (ID): 2 A
Maximum drain-source on-resistance: 0.45 ?
FET Technology: METAL-OXIDE SEMICONDUCTOR
Number of components: 1
Number of terminals: 2
Operating mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 °C
Polarity/Channel Type: N-CHANNEL
Maximum power consumption environment: 20 W
Maximum pulse drain current (IDM): 8 A
Surface Mount: YES
Terminal type: GULL WING
Terminal Location: SINGLE
Transistor Applications: SWITCHING
Transistor component materials: SILICON

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