2SK612 TO251 MOS Field Effect Power Transistors 2A 100V TO251 PRINTING MECH

₹ 125.00
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  • model:                                                           2SK612-Z          
  • life cycle:                                                        Obsolete
  • package instruction:                                        SMALL OUTLINE, R-PSSO-G2
  • Risk Level:                                                      5.84
  • Other features:                                               LOGIC LEVEL COMPATIBLE
  • Shell connection:                                             DRAIN
  • Configuration:                                                SINGLE WITH BUILT-IN DIODE
  • Minimum drain-source breakdown voltage:      100 V
  • Maximum drain current (ID):                            2 A
  • Maximum drain-source on-resistance:              0.45 ?
  • FET Technology:                                              METAL-OXIDE SEMICONDUCTOR
  • Number of components:                                  1
  • Number of terminals:                                      2
  • Operating mode:                                            ENHANCEMENT MODE
  • Maximum Operating Temperature:                  150 °C
  • Polarity/Channel Type:                                     N-CHANNEL
  • Maximum power consumption environment:     20 W
  • Maximum pulse drain current (IDM):                 8 A
  • Surface Mount:                                               YES
  • Terminal type:                                                GULL WING
  • Terminal Location:                                          SINGLE
  • Transistor Applications:                                   SWITCHING
  • Transistor component materials:                      SILICON

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