- model: 2SK612-Z
- life cycle: Obsolete
- package instruction: SMALL
OUTLINE, R-PSSO-G2
- Risk Level: 5.84
- Other features: LOGIC
LEVEL COMPATIBLE
- Shell connection: DRAIN
- Configuration: SINGLE
WITH BUILT-IN DIODE
- Minimum drain-source
breakdown voltage: 100 V
- Maximum drain current
(ID): 2 A
- Maximum drain-source
on-resistance: 0.45 ?
- FET Technology: METAL-OXIDE
SEMICONDUCTOR
- Number of components: 1
- Number of terminals: 2
- Operating mode: ENHANCEMENT
MODE
- Maximum Operating
Temperature: 150 °C
- Polarity/Channel
Type: N-CHANNEL
- Maximum power
consumption environment: 20 W
- Maximum pulse drain
current (IDM): 8 A
- Surface Mount: YES
- Terminal type: GULL
WING
- Terminal Location: SINGLE
- Transistor
Applications: SWITCHING
- Transistor component
materials: SILICON
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