model: 2SJ601
Risk Level: 5.73
Configuration: SINGLE
WITH BUILT-IN DIODE
Minimum drain-source
breakdown voltage: 60 V
Maximum drain current
(ID): 36 A
Maximum drain-source
on-resistance: 0.03 ?
FET Technology: METAL-OXIDE
SEMICONDUCTOR
Maximum feedback
capacitance (Crss): 230 pF
Number of components: 1
Number of terminals: 3
Working Mode: ENHANCEMENT
MODE
Polarity/Channel
Type: P-CHANNEL
Surface Mount: NO
Terminal surface: TIN
LEAD
Terminal type: THROUGH-HOLE
Terminal Location: SINGLE
Transistor
Applications: SWITCHING
Transistor component
materials: SILICON
